Keithley 4200A-SCS Parameter Analyzer

The Keithley 4200A SCS parameter analyzer is a precision instrument for testing and characterizing semiconductor devices. It combines current-voltage (I-V), capacitance-voltage (C-V), and pulsed I-V measurement functions in one system. This makes it useful for a wide range of research and development tasks, including materials testing, device modeling, reliability studies, and failure analysis.

The system comes with built-in software that includes hundreds of pre-written test routines you can modify to suit your specific needs. It also offers real-time graphing and automatic extraction of key parameters so you can analyze data as you collect it. The software also includes guided test creation and measurement tips to help ensure accurate results.

All-in-One Characterization System: This system combines current-voltage, capacitance-voltage, and pulsed I-V testing in one platform for complete semiconductor device analysis.

Accurate Low-Level Capacitance Measurement: Enables sensitive and low-noise capacitance characterization, suitable for advanced materials and device structures.

Seamless Switching Between Test Modes: This feature allows automated transitions between I-V and C-V measurements without manual re-cabling or repositioning, saving time and reducing error.

Stable Low Current Performance: This device is designed for high-precision low current measurements in challenging setups, such as those with long cables or high capacitance.

Real-Time Analysis and Visualization: Offers immediate feedback with live data plotting and automated extraction of key parameters during measurements.

Ready-to-Use Test Libraries: Includes a wide range of editable application tests, enabling faster setup and consistent testing across different devices and teams.

Flexible Integration with Probers and Environment Controllers: Works with various manual and semi-automated wafer probers and temperature control systems for extended testing environments.

Modular and Scalable Design: Easily add or swap modules to match evolving test requirements without interrupting lab operations.

Parameter

Details

Measurement Types

DC I-V, C-V, Pulsed I-V

DC I-V Measurement Range

Current: 10 aA to 1 A

Voltage: 0.2 µV to 210 V

Capacitance Measurement Unit

4215-CVU with integrated 1 V AC source

Frequency Range (C-V)

1 kHz to 10 MHz

C-V DC Bias Range

±30 V

Pulsed I-V Range

Voltage: ±40 V (80 V peak-to-peak)

Current: ±800 mA

Pulsed I-V Sampling Rate

200 mega-samples per second (MSa/s), 5 ns resolution

Capacitance Resolution

Single-digit femtofarads with 4215-CVU

AC Source Voltage (C-V)

1 V AC integrated into CVU

C-V Switching

Automated via 4200A-CVIV Multi-Switch (no re-cabling required)

Channels (C-V)

Up to 4 channels with 4200A-CVIV

Low Current Measurement

Femtoamp-level current measurements with 4201-SMU or 4211-SMU

SMU Capacity

Supports up to 9 Source Measure Unit channels

Software

Clarius+ software with real-time graphing, analysis, and parameter extraction

Cryogenic Controller Support

Compatible with Lakeshore Model 336 and others

Preconfigured Tests

Includes hundreds of editable application tests

Integration Support

Compatible with wafer probers and cryogenic temperature controllers

Data Streaming

Continuous during measurement via USB/GPIB

Semiconductor Device Characterization: Measure I-V and C-V properties of transistors, diodes, and other semiconductor components during development and qualification.

Process Development and Monitoring: Analyze electrical performance of materials and structures to optimize semiconductor fabrication processes.

Reliability and Lifetime Testing: To evaluate the long-term reliability of devices, perform stress and degradation studies such as TDDB, NBTI, and HCI.

Failure Analysis: Identify devices' electrical faults and weak points through precise low-current and voltage measurements.

Materials Research: Characterize dielectric properties, leakage behavior, and charge trapping in new semiconductor materials or stack designs.

Capacitance-Voltage Profiling: This technique extracts doping profiles, oxide thickness, and interface trap densities from MOS and other device structures.

Cryogenic Testing: Conduct low-temperature I-V and C-V testing for quantum devices, superconducting circuits, or advanced memory technologies.

Wafer-Level Testing with Probers: Integrate with manual or semi-automated wafer probers for automated device testing across whole wafers.

Keithley 4200A-SCS Parameter Analyzer

Key Features

Specifications

Applications